FANXIANG S660 NVME 1TB M.2 GEN 4
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Gen 4 Speed Advantage: Reaches sequential read speeds up to 5000 MB/s to slash system lag.
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PlayStation 5 Ready: The included low-profile heatsink is designed to fit inside the PS5 storage bay.
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High-Endurance TLC NAND: Backed by a robust 700 TBW endurance rating for years of reliable write cycles.
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Host Memory Buffer (HMB): Allocates minor system RAM as an active cache to maintain fast performance.
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Dynamic SLC Write Cache: Dynamically allocates up to 168GB of storage space to handle massive file transfers quickly.
31.900 DA
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FANXIANG S660 NVME 1TB M.2 GEN 4
Technical Specifications
| Component Category | Installed Hardware / Specific Variant | Key Metric / Feature Highlights |
| Storage Type & Standard | PCIe Gen 4 x4 NVMe 1.4 SSD | Standard M.2 2280 Single-Sided Form Factor |
| Storage Capacity | 1TB (1024 GB) | High-capacity TLC NAND flash cell configuration |
| Max Sequential Read | Up to 5000 MB/s | Fast game loads and near-instantaneous boot times |
| Max Sequential Write | Up to 4500 MB/s | Accelerated local file copy and big-data writing speeds |
| Controller Architecture | Maxio MAP1608A-F3C | TSMC 12nm Quad-Core ARM Cortex-R5 Processor |
| Nand Flash Memory | YMTC 128-Layer 3D TLC | Xtacking 2.0 architecture ensuring structural density |
| DRAM Cache Solution | DRAM-less Design | Employs HMB (Host Memory Buffer) technology |
| Physical Cooling Shield | Included Modular Heatsink | Removable low-profile metal shield (PS5-compliant) |
| Storage Endurance & Life | 700 TBW (Terabytes Written) | MTBF rating of 2,000,000 hours; 5-year warranty |
FANXIANG S660 NVME 1TB M.2 GEN 4
The Fanxiang S660 1TB M.2 PCIe Gen 4 NVMe SSD is a high-speed, budget-friendly solid-state drive engineered to deliver next-generation storage performance to PC builders, laptop upgraders, and PS5 console gamers. Focusing strictly on pricing value, this DRAM-less drive strips away high premium brand markups to optimize raw read/write speeds, passive thermal efficiency, and long-term storage endurance.
Operating on a native PCIe Gen 4 x4 lane interface, the S660 leverages a dynamic SLC write cache (approximately 118GB to 168GB) to achieve impressive sequential read speeds up to 5000 MB/s and write speeds up to 4500 MB/s. The drive is powered by a reliable Maxio MAP1608A quad-core controller paired with high-quality YMTC 128-layer 3D TLC NAND flash memory, utilizing Host Memory Buffer (HMB) technology to sustain lightning-fast gaming loads and system boot times without needing expensive dedicated DRAM chips. Packaged with an easy-to-install aluminum passive heatsink directly in the retail box, it prevents thermal throttling under intense operational workloads, serving as an exceptional high-capacity storage solution.
"The Fanxiang S660 1TB NVMe brings blazing PCIe Gen 4 speeds up to 5000 MB/s, an included PS5-compatible heatsink, and a high-endurance 700 TBW TLC architecture together for an incredibly cost-effective storage upgrade."
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