FANXIANG S660 NVME 1TB M.2 GEN 4

  • Gen 4 Speed Advantage: Reaches sequential read speeds up to 5000 MB/s to slash system lag.

  • PlayStation 5 Ready: The included low-profile heatsink is designed to fit inside the PS5 storage bay.

  • High-Endurance TLC NAND: Backed by a robust 700 TBW endurance rating for years of reliable write cycles.

  • Host Memory Buffer (HMB): Allocates minor system RAM as an active cache to maintain fast performance.

  • Dynamic SLC Write Cache: Dynamically allocates up to 168GB of storage space to handle massive file transfers quickly.

31.900 DA

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FANXIANG S660 NVME 1TB M.2 GEN 4

Technical Specifications

Component Category Installed Hardware / Specific Variant Key Metric / Feature Highlights
Storage Type & Standard PCIe Gen 4 x4 NVMe 1.4 SSD Standard M.2 2280 Single-Sided Form Factor
Storage Capacity 1TB (1024 GB) High-capacity TLC NAND flash cell configuration
Max Sequential Read Up to 5000 MB/s Fast game loads and near-instantaneous boot times
Max Sequential Write Up to 4500 MB/s Accelerated local file copy and big-data writing speeds
Controller Architecture Maxio MAP1608A-F3C TSMC 12nm Quad-Core ARM Cortex-R5 Processor
Nand Flash Memory YMTC 128-Layer 3D TLC Xtacking 2.0 architecture ensuring structural density
DRAM Cache Solution DRAM-less Design Employs HMB (Host Memory Buffer) technology
Physical Cooling Shield Included Modular Heatsink Removable low-profile metal shield (PS5-compliant)
Storage Endurance & Life 700 TBW (Terabytes Written) MTBF rating of 2,000,000 hours; 5-year warranty

FANXIANG S660 NVME 1TB M.2 GEN 4

The Fanxiang S660 1TB M.2 PCIe Gen 4 NVMe SSD is a high-speed, budget-friendly solid-state drive engineered to deliver next-generation storage performance to PC builders, laptop upgraders, and PS5 console gamers. Focusing strictly on pricing value, this DRAM-less drive strips away high premium brand markups to optimize raw read/write speeds, passive thermal efficiency, and long-term storage endurance.

Operating on a native PCIe Gen 4 x4 lane interface, the S660 leverages a dynamic SLC write cache (approximately 118GB to 168GB) to achieve impressive sequential read speeds up to 5000 MB/s and write speeds up to 4500 MB/s. The drive is powered by a reliable Maxio MAP1608A quad-core controller paired with high-quality YMTC 128-layer 3D TLC NAND flash memory, utilizing Host Memory Buffer (HMB) technology to sustain lightning-fast gaming loads and system boot times without needing expensive dedicated DRAM chips. Packaged with an easy-to-install aluminum passive heatsink directly in the retail box, it prevents thermal throttling under intense operational workloads, serving as an exceptional high-capacity storage solution.

"The Fanxiang S660 1TB NVMe brings blazing PCIe Gen 4 speeds up to 5000 MB/s, an included PS5-compatible heatsink, and a high-endurance 700 TBW TLC architecture together for an incredibly cost-effective storage upgrade."

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